THEORY OF HYDROGEN EVOLUTION IN AMORPHOUS HYDROGENATED SILICON: COMPARISON WITH EXPERIMENTSGERMAIN P; ZELLAMA K.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 87; NO 4; PP. 347-364; BIBL. 21 REF.Article

CRYSTALLIZATION IN AMORPHOUS GERMANIUMGERMAIN P; ZELLAMA K; SQUELARD S et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 6986-6994; BIBL. 29 REF.Article

GROWTH RATE OF CRYSTALLIZATION IN AMORPHOUS GERMANIUM PRODUCED BY ION IMPLANTATION: A RAMAN SPECTROSCOPY STUDYZELLAMA K; MORHANGE JF; GERMAIN P et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 56; NO 2; PP. 717-723; ABS. FRE; BIBL. 13 REF.Article

CRYSTALLIZATION OF PHOSPHORUS-DOPED AMORPHOUS SILICON FILMS PREPARED BY GLOW DISCHARGE DECOMPOSITION OF SILANESQUELARD S; ZELLAMA K; GERMAIN P et al.1981; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1981; VOL. 16; NO 12; PP. 657-662; ABS. FRE; BIBL. 12 REF.Article

POSSIBLE CONFIGURATIONAL MODEL FOR HYDROGEN IN AMORPHOUS SI:H. AN EXODIFFUSION STUDYZELLAMA K; GERMAIN P; SQUELARD S et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 12; PP. 6648-6667; BIBL. 48 REF.Article

Effect of nitrogen on the optoelectronic properties of a highly sp²-rich amorphous carbon nitride filmsALIBART, F; LEJEUNE, M; ZELLAMA, K et al.Diamond and related materials. 2011, Vol 20, Num 3, pp 409-412, issn 0925-9635, 4 p.Article

Structure and optical properties of carbon nitride films deposited by magnetron sputteringLEJEUNE, M; DURAND-DROUHIN, O; ZELLAMA, K et al.Solid state communications. 2001, Vol 120, Num 9-10, pp 337-342, issn 0038-1098Article

Effect of annealing on the structural and electrical properties of d.c. multipolar plasma deposited a-C:H filmsCLIN, M; BENLAHSEN, M; ZEINERT, A et al.Thin solid films. 2000, Vol 372, Num 1-2, pp 60-69, issn 0040-6090Article

The effect of hydrogen evolution on the mechanical properties of hydrogenated amorphous carbonBENLAHSEN, M; BRANGER, V; HENOCQUE, J et al.Diamond and related materials. 1998, Vol 7, Num 6, pp 769-773, issn 0925-9635Conference Paper

Effect of the defects on the optical and electronic properties of plasma polymerized organic thin filmsMANAA, C; LEJEUNE, M; VON BARDELEBEN, H. J et al.Solid state communications. 2014, Vol 188, pp 36-39, issn 0038-1098, 4 p.Article

Influence on the sp³/sp² character of the carbon on the insertion of nitrogen in RFMS carbon nitride filmsBOUCHET-FABRE, B; LAZAR, G; BALLUTAUD, D et al.Diamond and related materials. 2008, Vol 17, Num 4-5, pp 700-704, issn 0925-9635, 5 p.Conference Paper

Effect of the RF power and deposition temperature on the electrical and vibrational properties of carbon nitride filmsLAZAR, G; CLIN, M; CHARVET, S et al.Diamond and related materials. 2003, Vol 12, Num 2, pp 201-207, issn 0925-9635, 7 p.Conference Paper

Correlation between the gap states density and the modes of hydrogen incorporation in a-Si:H as a function of deposition conditions and thermal annealingCHAHED, L; ZELLAMA, K; SLADEK, P et al.Annales de chimie (Paris. 1914). 1994, Vol 19, Num 7-8, pp 453-458, issn 0151-9107Conference Paper

Experimental studies of the light-induced effects in undoped hydrogenated amorphous silicon as a function of deposition conditionsZELLAMA, K; LABIDI, H; ROCA, P et al.Thin solid films. 1991, Vol 204, Num 2, pp 385-395, issn 0040-6090Article

Surface roughness and optoelectronic properties of intrinsic and doped nc-Si:H prepared by Rf-magnetron sputtering at low temperatureBELFEDAL, A; BENLAKEHAL, D; BOUIZEM, Y et al.Materials science in semiconductor processing. 2014, Vol 26, pp 231-237, issn 1369-8001, 7 p.Article

Influence of hydrogen dilution and substrate temperature on growth of nanocrystalline hydrogenated silicon carbide films deposited by RF sputteringMADANI, M; COLDER, H; PORTIER, X et al.Microelectronics journal. 2006, Vol 37, Num 10, pp 1031-1035, issn 0959-8324, 5 p.Article

Effect of the hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered hydrogenated amorphous silicon filmsDAOUAHI, M; BEN OTHMANE, A; ZELLAMA, K et al.Solid state communications. 2001, Vol 120, Num 5-6, pp 243-248, issn 0038-1098Article

Hydrogen incorporation in device-quality a-Si:H deposited at low temperatureZELLAMA, K; NEDIALKOVA, L; BOUNOUTH, Y et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 81-84, issn 0022-3093, 1Conference Paper

Systematic study of light-induced effects in hydrogenated amorphous siliconZELLAMA, K; LABIDI, H; GERMAIN, P et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 23, pp 13314-13322, issn 0163-1829Article

Junction capacitance studies of deep defects in undoped hydrogenated amorphous siliconCOHEN, J. D; GELATOS, A. V; MAHAVADI, K. K et al.Solar cells. 1988, Vol 24, Num 3-4, pp 287-297, issn 0379-6787Conference Paper

Solid-phase crystallization kinetics in doped a-Si chemical-vapor-deposition filmsBISARO, R; MAGARINO, J; ZELLAMA, K et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 6, pp 3568-3575, issn 0163-1829Article

Hydrogen exodiffusion experiments in phosphorous doped a-Si:HZELLAMA, K; GERMAIN, P; SQUELARD, S et al.Solid state communications. 1983, Vol 47, Num 5, pp 379-382, issn 0038-1098Article

Influence of the radio-frequency power on the physical and optical properties of plasma polymerized cyclohexane thin filmsMANAA, C; LEJEUNE, M; KOUKI, F et al.Thin solid films. 2014, Vol 560, pp 55-58, issn 0040-6090, 4 p.Conference Paper

Low-temperature growth of nanocrystalline silicon films prepared by RF magnetron sputtering : Structural and optical studiesAMRANI, R; BENLEKEHAL, D; BAGHDAD, R et al.Journal of non-crystalline solids. 2008, Vol 354, Num 19-25, pp 2291-2295, issn 0022-3093, 5 p.Conference Paper

Spectroscopic study using FTIR, Raman, XPS and NEXAFS of carbon nitride thin films deposited by RF magnetron sputteringBOUCHET-FABRE, B; MARINO, E; LAZAR, G et al.Thin solid films. 2005, Vol 482, Num 1-2, pp 167-171, issn 0040-6090, 5 p.Conference Paper